NUREMBERG, Germany--(BUSINESS WIRE)--PCIM 2023 – Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today introduced the ...
These 3300V and 2300V UHV devices are based on Navitas’ fourth-generation GeneSiC™ platform which uses a TAP architecture to implement a multi-step e-field management profile that significantly ...
Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...
Powerex announces availability of a 3300V/200A (QID3320002) and 4500V/150A (QID4515002) dual High Voltage IGBTs (HVIGBTs). These extended voltage HVIGBTs have been developed for use on 4160 Volt AC ...
These gate drivers have been designed to target the popular new dual, 100 mm x 140 mm style of IGBT modules, such as the Mitsubishi LV100 and the Infineon XHP 2, as well as silicon carbide (SiC) ...
New 3300V and 2300V SiC products based on latest GeneSiC™ Trench-Assisted Planar technology and packaging innovations to augment efficiency and lifetime for AI data center, grid and energy ...
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