As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...
New technical paper titled “Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction” from researchers at Ningbo Institute of Materials ...
Researchers at Peking University have scaled the physical gate length of a ferroelectric transistor down to 1nm and propose a novel “nanogate ultra-low-power ferroelectric transistor” architecture. By ...
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