Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...
Growing concerns about energy efficiency have led to the development of electronics with higher power density. In grid-connected and industrial applications, such as AC motor control, uninterruptible ...
Sometimes, those involved in IC design can get a very narrow view of their particular specialty area. This article, while covering some basics, aims to provide a global overview to everyone on the ...
Profile variation is one of the most important problems during semiconductor device manufacturing and scaling. These variations can degrade both chip yield and device performance. Virtual fabrication ...
Some of the most challenging leakage-current-testing requirements are those for patient-monitoring devices—both invasive and noninvasive. Such testing can be time-consuming and expensive, so it is ...
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