Conventional silicon-based electronics are rapidly approaching a fundamental barrier. Below about five nanometers, quantum effects make their behavior unpredictable. That’s led to research into ...

A research team has implemented a novel method to achieve epitaxial growth of 1D metallic materials with a width of less than 1 nm. The group applied this process to develop a new structure for 2D ...

When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior ...

A team of scientists from the Institute for Basic Science has developed a revolutionary technique for producing 1D metallic materials with a width of less than 1 nm by epitaxial growth. Using this ...

The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...