Power integrated modules have been widely used in motion control for their remarkable performance, easy modular installation, and high reliability. However, as the latest die technology continues to ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM Europe – Power Integrations (NASDAQ: POWI), the leader in gate driver technology for medium- and high-voltage inverter applications, today announced the SCALE ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM 2023 – Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today introduced the ...

1SP0635 SCALE-2 Plug-and-Play drivers safely and reliably drive 130 x 140 mm and 190 x 140 mm high-voltage and high-power IGBT modules ranging from 1200 V to 3300 V. They are optimised for use in high ...

Infineon Technologies AG announced the launch of two new power module platforms designed to improve the performance of high-voltage IGBTs in voltage classes from 1200 V up to 6.5 kV. To make the ...

The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and ...

Taiwan-based Panjit International has signed contracts with Taiwan's Industrial Technology Research Institute (ITRI) to jointly establish pilot production lines for ITRI's IGBT smart power module in ...

As the relatively mature wire-bonding technology continues to advance, it has become fully suitable for processing automotive silicon-based IGBT modules, and SiC (silicon carbide) power modules and is ...

The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...

(MENAFN- GlobeNewsWire - Nasdaq) Key market opportunities exist in the rapid growth and deployment of advanced SiC and GaN power devices within new energy vehicles, driven by increasing sales of 800V+ ...

Manufacturers of next-generation electric vehicles (EVs) and hybrid electric vehicles (HEVs) are eyeing the use of wide bandgap (WBG) silicon-carbide (SiC) and gallium-nitride (GaN) devices. These two ...

Developing a power module requires enhanced design and verification methods. Currently, multiple iterations are needed to get the design done. Today, design and manufacturing processes are heavily ...