In order to divide the power involved and create devices that can tolerate more power, switches, resistors, and MOSFETs are connected in parallel. To boost the output current’s capacity, you can ...

Silicon carbide (SiC) MOSFETs are increasingly used in high-power applications owing to their superior switching speeds, low on‐resistance and enhanced thermal performance. In order to achieve higher ...

Based on several high-power applications, we can see a clear trend of using power modules and discrete MOSFETs. There is a significant overlap between both, roughly from 10 kW to 50 kW. Modules fit ...

Compared to other discrete packages, the number of parallel MOSFETs needed in high-current applications can be significantly reduced, if not eliminated, leading to overall lower system costs.

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

Given the maturity of MOSFETs, selecting one for your next design may seem deceptively simple. Engineers are familiar with the figures of merit on a MOSFET data sheet. Selecting a MOSFET requires the ...