A new technical paper titled “Fully rubbery Schottky diode and integrated devices” was published by researchers at Penn State University. The Office of Naval Research and the National Science ...
Taking gallium nitride power ICs to the next level, researchers at Imec report co-integration of Schottky barrier diodes and high-electron-mobility transistors (HEMTs) on a smart power platform. The ...
This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...
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