The CHT-NEPTUNE is a high-temperature, high-voltage, SiC MOSFET specifically built for power converter applications in high-temperature and harsh environments. It is available in a hermetically-sealed ...
SemiQ has created a line of 1,200V SiC mosfet SOT-227 modules with Rds(on) at 7.4. 15 or 34mΩ. There are six models, half have ‘GCMX’ part numbers and just have a mosfet, while the others, GCMS types, ...
SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...
Find a downloadable version of this story in pdf format at the end of the story. Cree, Inc. has gained the distinction of producing the industry's first fully-qualified, commercial silicon carbide ...
Advances in EV technology to make them more practical. How SiC MOSFETs will help meet the current challenges in the EV arena. The all-important high switching speeds of SiC MOSFETs. Silicon-carbide ...
SemiQ has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series. Gen3 SiC MOSFET offering with 1200 V TSPAK series Credit: SemiQ The four-strong series of ...
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