3rd gen 650 V ‘fast’ silicon carbide (SiC) MOSFETs deliver highest power density in robust, thermally enhanced packaging for critical, high-reliability, high-efficiency applications TORRANCE, Calif., ...
SUNNYVALE, Calif.--(BUSINESS WIRE)-- Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap ...
Santa Clara, CA and Kyoto, Japan, Dec. 04, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they have begun mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL (TO-Leadless) ...
ROHM Semiconductor recently began mass production of its SCT40xxDLL SiC MOSFET series in compact TOLL packages, delivering around 39% better thermal performance, a roughly 26% smaller footprint, and 2 ...
The Gen 4 silicon carbide field-effect transistor (SiC FET) manufactured by Qorvo can withstand high voltages and currents. SiC FETs offer several advantages over conventional silicon-based ...
Now in mass production, Rohm’s SCT40xxDLL series of SiC MOSFETs in TOLL (TO-Leadless) packages delivers high power-handling capability in a compact, low-profile form factor. According to ROHM, the ...
Magnachip Semiconductor Corporation (NYSE: MX, “Magnachip”) today announced the release of two new 650V Super Junction MOSFET (SJ MOSFET) products, adopting the TO-Leadless (TOLL) package, that are ...
Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these new packages offer approximately 39% improved thermal performance. This enables high-power ...
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