Insulated Gate Bipolar Transistor (IGBT) technologies have evolved significantly over recent decades to meet the stringent requirements of high-power and high-efficiency applications. Combining the ...

This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...

The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...

The fun part about logic gates is that there are so many ways to make them, with each approach having its own advantages and disadvantages. Although these days transistor-transistor logic (TTL) is the ...

A research team led by Director Jo Moon-Ho of the Center for Van der Waals Quantum Solids within the Institute for Basic Science (IBS) has implemented a novel method to achieve epitaxial growth of 1D ...

Samsung was the first fab to launch a 3nm process in mid-2022, beating TSMC to market by about six months. Plus, its 3nm node offers gate-all-around (GAA) transistors, which none of its rivals have ...

Pat gelsinger, boss of Intel, a chipmaker, loves to brag that his firm is leading the charge in semiconductor technology by entering the “angstrom era”. The angstrom, named in honour of Anders Jonas ...