New York, March 14, 2023 (GLOBE NEWSWIRE) -- Reportlinker.com announces the release of the report "Insulated Gate Bipolar Transistor (IGBT) Global Market Report 2023 ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...

ISELIN, NJ--(Marketwired - Aug 18, 2016) - TDK Corporation today announced a new EPCOS DC link capacitor that has been specifically designed for the HybridPACK™ 1-DC6 Insulated Gate Bipolar Transistor ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today the coming launch of its T-series 2.0kV Insulated Gate Bipolar Transistor (IGBT) Module for Industrial Use, the ...

Mitsubishi Electric is introducing its 6th generation Mega Power Dual (MPD) Insulated Gate Bipolar Transistor (IGBT) modules. The modules, which are for use in power converters such as large-capacity ...

Will reduce power consumption and size of renewable-energy power-supply systems, and more TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO:6503) announced today the launch of its ...