—The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...

As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...

New process device profiles have been added by ODVA to the EtherNet/IP specification to provide end users with another tool to help optimize plant operations. According to ODVA, the new process device ...

Two-wire transmitter technology came about from an agreement among various instrument suppliers in the 1950s to standardize on 4-20 mA current loops as a means of sending a flow, temperature, pressure ...

We first developed a virtual device structure to test how ALD thickness affects hole size uniformity and CD. We started our virtual experiment by using two crisscross SAQP processes and transferring a ...