Rohm Semiconductor has announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

X-FAB and SMART Photonics recently signed a Memorandum of Understanding to formalise their collaboration. The aim is to ...

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Toshiba Electronics Europe has announced early test samples in bare die format of new 1200V SiC MOSFETs with low ...

At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.

Companies to use X-Celeprint's micro-transfer printing to build next gen transceivers with silicon photonics and InP integration Specialist foundry X-FAB, and InP photonics foundry SMART Photonics ...